A.O. Evwaraye: search on Z-Library

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1

Photoneutron angular distributions from the 2H(γ, n)H reaction

Y.M. Shin, J.A. Rawlins, W. Buss, A.O. Evwaraye

Journal:

Nuclear Physics A

Year:

1970

Language:

english

File:

PDF, 1.01 MB

english, 1970

2

Determination of the activation energy ɛ3 for impurity conduction in n-type 4H–SiC

Evwaraye, A. O., Smith, S. R., Mitchel, W. C., Roth, M. D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 338 KB

english, 1996

3

Shallow and deep levels in n-type 4H-SiC

Evwaraye, A. O., Smith, S. R., Mitchel, W. C.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 385 KB

english, 1996

4

Analysis of Cr-Doped CdGeAs2 Using Thermal Admittance Spectroscopy

Smith, S.R., Evwaraye, A.O., Ohmer, M.C., Saxler, A. W., Goldstein, J. T., Solomona, J., Schunemann, P. G., Pollak, T. M.

Journal:

MRS Proceedings

Year:

1999

Language:

english

File:

PDF, 312 KB

english, 1999

5

Deep Level near EC – 0.55 eV in Undoped 4H-SiC Substrates

Mitchel, W.C., Mitchell, William D., Smith, S.R., Landis, G.R., Evwaraye, A.O., Fang, Z.Q., Look, David C., Sizelove, J.R.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 285 KB

english, 2006

6

Admittance Spectroscopy of 6H, 4H, and 15R Silicon Carbide

S. R. Smith, A. O. Evwaraye, W. C. Mitchel

Journal:

physica status solidi (a)

Year:

1997

Language:

english

File:

PDF, 275 KB

english, 1997

7

Effects of Illumination on Ar+-Implantedn-Type 6H-SiC Epitaxial Layers

A.O. Evwaraye, S.R. Smith, W.C. Mitchel, M.A. Capano

Journal:

Journal of Electronic Materials

Year:

2007

Language:

english

File:

PDF, 323 KB

english, 2007

8

Phonon-Assisted Tunneling fromZ1/Z2in 4H-SiC

Journal:

Journal of Electronic Materials

Year:

2010

Language:

english

File:

PDF, 253 KB

english, 2010

9

Shallow acceptor levels in 4H- and 6H-SiC

S. R. Smith, A. O. Evwaraye, W. C. Mitchel, M. A. Capano

Journal:

Journal of Electronic Materials

Year:

1999

Language:

english

File:

PDF, 172 KB

english, 1999

10

Electrical characteristics of sputtering-induced defects in n-type silicon

LP Andersson, AO Evwaraye

Journal:

Year:

1978

Language:

english

File:

PDF, 318 KB

english, 1978

11

Impurity states in cobalt-doped silicon

Journal:

Journal of Electronic Materials

Year:

1978

Language:

english

File:

PDF, 582 KB

english, 1978

12

Electronic properties of boron in p-type bulk 6H-SiC

W. C. Mitchel, Matthew Roth, A. O. Evwaraye, P. W. Yu, S. R. Smith

Journal:

Journal of Electronic Materials

Year:

1996

Language:

english

File:

PDF, 438 KB

english, 1996

13

An anomalous M1 transition in 38Cl

S. Maripuu, B.H. Wildenthal, A.O. Evwaraye

Journal:

Physics Letters B

Year:

1973

Language:

english

File:

PDF, 185 KB

english, 1973

14

Electrical properties of platinum in silicon as determined by deep-level transient spectroscopy

Evwaraye, A. O., Sun, Edmund

Journal:

Journal of Applied Physics

Year:

1976

Language:

english

File:

PDF, 542 KB

english, 1976

15

Electron-irradiation-induced divacancy in lightly doped silicon

Evwaraye, A. O.

Journal:

Journal of Applied Physics

Year:

1976

Language:

english

File:

PDF, 572 KB

english, 1976

16

Fermi level control and deep levels in semi-insulating 4HâSiC

Mitchel, W. C., Perrin, R., Goldstein, J., Saxler, A., Roth, M., Smith, S. R., Solomon, J. S., Evwaraye, A. O.

Journal:

Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 339 KB

english, 1999

17

Shallow levels in n-type 6H-silicon carbide as determined by admittance spectroscopy

Evwaraye, A. O., Smith, S. R., Mitchel, W. C.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 689 KB

english, 1994

18

The Dominant Recombination Centers in Electron-Irradiated Semiconductors Devices

Evwaraye, A. O.

Journal:

Journal of The Electrochemical Society

Year:

1977

Language:

english

File:

PDF, 463 KB

english, 1977

19

[IEEE 10th International Semiconducting and Insulating Materials - Berkeley, CA, USA (1-5 June 1998)] Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) - The 1.1 eV deep level in 4H-SiC

Mitchel, W.C., Perrin, R., Goldstein, J., Roth, M., Smith, S.R., Solomon, J.S., Evwaraye, A.O., Hobgood, H.M., Augustine, G., Balakrishna, V.

Year:

1998

Language:

english

File:

PDF, 236 KB

english, 1998

20

DLTS Measurements of Trapping Defects in High Purity Germanium

Evwaraye, A. O., Hall, R. N., Soltys, T. J.

Journal:

IEEE Transactions on Nuclear Science

Year:

1979

Language:

english

File:

PDF, 1.01 MB

english, 1979

21

Optical admittance studies of vanadium donor level in high-resistivity p-type 6H-SiC

Evwaraye, A. O., Smith, S. R., Mitchel, W. C.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 359 KB

english, 1996

22

Boron acceptor levels in 6H-SiC bulk samples

Evwaraye, A. O., Smith, S. R., Mitchel, W. C., Hobgood, H. McD.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 320 KB

english, 1997

23

Electrical properties of manganese‐doped gallium phosphide

Evwaraye, A. O., Woodbury, H. H.

Journal:

Journal of Applied Physics

Year:

1976

Language:

english

File:

PDF, 486 KB

english, 1976

24

Optical admittance spectroscopy studies near the band edge of gallium nitride

Evwaraye, A. O., Smith, S. R., Elhamri, S.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 736 KB

english, 2014

25

Examination of electrical and optical properties of vanadium in bulk n-type silicon carbide

Evwaraye, A. O., Smith, S. R., Mitchel, W. C.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 724 KB

english, 1994

26

Annealing of irradiation-induced defects in arsenic-doped silicon

Year:

1977

Language:

english

File:

PDF, 514 KB

english, 1977

27

Electric field enhancement of electron emission rates from Z[sub 1/2] centers in 4H-SiC

A. O. Evwaraye, S. R. Smith, W. C. Mitchel, G. C. Farlow

Year:

2009

Language:

english

File:

PDF, 861 KB

english, 2009

28

Electron-irradiation damage in antimony-doped silicon

Year:

1977

Language:

english

File:

PDF, 555 KB

english, 1977

29

Kinetics of slow buildup of photoconductance in n-type 6H–SiC

A. O. Evwaraye, S. R. Smith, W. C. Mitchel

Year:

1995

Language:

english

File:

PDF, 321 KB

english, 1995

30

SiC crystals

Kalabukhova, E. N., Lukin, S. N., Saxler, A., Mitchel, W. C., Smith, S. R., Solomon, J. S., Evwaraye, A. O.

Journal:

Physical Review B

Year:

2001

Language:

english

File:

PDF, 69 KB

english, 2001

31

Observation of surface defects in 6H-SiC wafers

Evwaraye, A. O., Smith, S. R., Skowronski, M., Mitchel, W. C.

Journal:

Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 640 KB

english, 1993

32

The role of oxygen in irradiated arsenic-doped silicon

Evwaraye, A. O.

Journal:

Applied Physics Letters

Year:

1976

Language:

english

File:

PDF, 413 KB

english, 1976

33

Determination of the band offsets of the 4H–SiC/6H–SiC heterojunction using the vanadium donor (0/+) level as a reference

Evwaraye, A. O., Smith, S. R., Mitchel, W. C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 265 KB

english, 1995

34

Temperature dependence of the barrier height of metal-semiconductor contacts on 6H-SiC

Smith, S. R., Evwaraye, A. O., Mitchel, W. C.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 325 KB

english, 1996

35

Observation of a deep level due to In doping in p-type GaAs

Smith, S. R., Evwaraye, A. O., Mitchel, W. C.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 522 KB

english, 1989

36

Room temperature instability of electron induced defects in n-type silicon containing germanium

Evwaraye, A. O.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 346 KB

english, 1979

37

Reply to ‘‘Comment on ‘Temperature dependence of the barrier height of metal-semiconductor contacts on 6H-SiC’ ’’

Smith, S. R., Evwaraye, A. O., Mitchel, W. C.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 257 KB

english, 1996

38

Spectral Characterization of Persistent Photo Conductance in SiC

Smith, Steven, Evwaraye, Andrew, Mitchel, William

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 501 KB

english, 2006

39

Ion Implantation and 1 MeV Electron Irradiation of 4H-SiC---Comparison Studies

Evwaraye, A. O., Smith, S. R., Mitchel, W. C., Farlow, G. C., Capano, M. A.

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 224 KB

english, 2004

40

Deep Levels in SiC:V by High Temperature Transport Measurements

Mitchel, W.C., Perrin, Ronald, Goldstein, Jonathan, Roth, Matthew D., Ahoujja, M., Smith, S.R., Evwaraye, A.O., Solomon, J.S., Landis, G., Jenny, Jason R., McD. Hobgood, H., Augustine, G., Balakrishna

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 316 KB

1998

41

Vanadium-free Semi-insulating 4H-SiC Substrates

Mitchel, W.C., Saxler, Adam W., Perrin, Ronald, Goldstein, Jonathan, Smith, S.R., Evwaraye, A.O., Solomon, J.S., Brady, M.F., Tsvetkov, Valeri F., Carter Jr., Calvin H.

Journal:

Materials Science Forum

Year:

2000

Language:

english

File:

PDF, 305 KB

english, 2000

42

Phonon Spectrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance Spectroscopy

Smith, S.R., Evwaraye, A.O., Mitchel, W.C.

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 330 KB

1998

43

Thermal Activation Energies for the Three Inequivalent Lattice Sites for the BSi Acceptor in 6H-SiC

Evwaraye, A.O., Smith, S.R., Mitchel, W.C., McD. Hobgood, H., Augustine, G., Balakrishna, Vijay

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 375 KB

1997

44

Impurity Conduction in n-Type 4H-SIC

Evwaraye, A. O., Smith, S. R., Mitchel, W. C., Roth, M. D.

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 271 KB

english, 1996

45

Characterization of Defects in N-Type 6H-SiC Single Crystals by Optical Admittance Spectroscopy

Evwaraye, A. O., Smith, S. R., Mitchel, W. C.

Journal:

MRS Proceedings

Year:

1994

Language:

english

File:

PDF, 238 KB

english, 1994

46

Electrical and Optical Properties of Defects in N-Type 4h-Sic

Evwaraye, A. O., Smith, S. R., Mitchel, W. C.

Journal:

MRS Proceedings

Year:

1995

Language:

english

File:

PDF, 351 KB

english, 1995

47

Thermal And Optical Admittance Spectroscopy Studies Of Defects In 15r-Sic

Smith, S. R., Evwaraye, A. O., Mitchel, W. C.

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 283 KB

english, 1996

48

Characterization of Defects in N-Type 6H-SiC Single Crystals by Optical Admittance Spectroscopy

Evwaraye, A.O., Smith, S.R., Mitchel, W.C.

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 237 KB

english, 1993

49

Anomolous Behavior of DX Centers in Compositionally Graded GaAs/AlXGa1-XAs:Si Heterojunctions

Smith, S.R., Evwaraye, A.O.

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 315 KB

english, 1993

50

Study of Deep Levels by Admittance Spectroscopy in High Resistivity P-Type 6H-SiC Single Crystals

Evwaraye, A. O., Smith, S. R., Mitchel, W. C.

Journal:

MRS Proceedings

Year:

1995

Language:

english

File:

PDF, 348 KB

english, 1995